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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CH847BPT CURRENT 0.1 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) (3) MARKING * HFE(Q):NV * HFE(R):1F * HFE(S):NW (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) 2 .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 7X5X0.6mm ceramic board. storage temperature junction temperature CONDITIONS open emitter open base open collector - - - - - - -55 - MIN. MAX. 50 45 6 0.1 0.2 W 0.35 +150 150 C C V V V A UNIT 2004-03 RATING CHARACTERISTIC ( CH847BPT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat VBE(on) Cib Cob fT Note 1. Pulse test: t p 300 s; 0.02. 2. hFE: Classification Q: 110 to 220, R: 200 to 450, S: 420 to 800 CONDITIONS IE = 0; VCB = 30 V collector cut-off current IC = 0; VCB = 30 V; TA = 150 OC collector-base breakdown voltage IC =50uA collector-emitter breakdown voltage IC =1mA IE =50uA emitter-base breakdown voltage VCE /I C =5V/2 mA current transfer ratio DC IC = 10 mA ; I B = 0.5 mA collector-emitter saturation IC = 100 mA ; I B = 5 mA voltage base-emitter satur ation voltage emitter input capacitance collector output capacitance transition frequency IC = 10 mA;VCE= 5.0 V IC = 0; VCB = 0.5V ; f = 1 MH z IE = 0; VCB = -10V ; f = 1 MH z IE = -20 mA; VCE = 5 V ; f = 100 MHz PARAMETER MIN. - - 50 45 6 110 - - 0.58 - - - Typ. - - - - - - - - - 8 3 200 UNIT MAX. 15 nA 5 uA V - V - - V 800 250 mV 600 0.77 - - - mV V pF pF MHz RATING CHARACTERISTIC CURVES ( CH847BPT ) fig1.Griunded emitter output characteristics COLLECTOR CURRENT : Ic (mA) 100 600 500 400 50 300 200 100 0 0 Ta=25 C 10 COLLECTOR-EMITTERVOLTAGE : VCE(V) 5 IB=0uA O COLLECTOR EMITTER SATURATION fig2.Co llector-Emitter Saturation Voltage vs Collector Current VOLTAGE : VCE(Sat)(V) 0.3 Ta=25 C IC/IB=10 O 0.2 0.1 0 1.0 10 100 I C - COLLECTOR CURRENT (mA) 1000 RATING CHARACTERISTIC CURVES ( CH847BPT ) fig3.DC current gain VS. collector current ( 1 ) 1000 DC CURRENT GAIN : hFE Ta=25 C DC CURRENT GAIN : hFE O fig4.DC current gain VS. collector current ( 2 ) 1000 Ta=125 C O 25 O C -55 C O Ta=25 C O VCE=10V 100 1V 100 10 0.1 1 10 100 I C - COLLECTO CURRENT (mA) 1000 10 0.1 1 10 100 1000 I C - COLL ECTOR CURRENT (mA) BASE EMITTER SATURATION VOLTAGE : VBE(Sat)(V) fig5.AC current gain VS. collector current 1000 AC CURRENT GAIN : hFE Ta=25 C VCE=10V f=1KHZ O fig6.Base-emitter saturation voltage VS. collector current 1.8 1.6 1.2 Ta=25 C IC/IB=10 O 100 0.8 0.4 0 1.0 10 100 1000 I C - COLLECTO CURRENT (mA) 10 0.1 1 10 100 1000 I C - COLLECTO CURRENT (mA) BASE EMITTER VOLTAGE : VBE(ON)(V) fig7.Grounded emitter propagation characteristics 1.8 1.6 1.2 TURN ON TIME : ton(ns) Ta=25 C VCE=10V O fig8.Turn-on time VS. collector current 1000 Ta=25 C IC/IB=10 O 0.8 10 0 VCC=30V 10V 10 1 10 100 I C - COLLECTOR CURRENT (mA) 0.4 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1000 RATING CHARACTERISTIC CURVES ( CH847BPT ) fig9.Rise time VS. collector current 500 Ta=25 C Vcc=30V IC/IB=10 O fig10.Fall time VS. collector current 500 FALL TIME : tr(ns) Ta=25 C Vcc=30V O RISE TIME : tr(ns) 100 100 10 5 1.0 10 1.0 100 10 I C - COLLECTO CURRENT (mA) 1000 100 10 I C - COLLECTO CURRENT (mA) 1000 fig11.Input / output capacitance VS. voltage 100 Ta=25 C f=1MHZ O CAPAITANCE(pF) Cib 10 Cob 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 |
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